State Key Laboratory of Analog and Mixed-Signal VLSI: AMSV Distinguished Lecture by Dr. Liang Wu
2017/09/18

The University Lecture on “State Key Laboratory of Analog and Mixed-Signal VLSI: AMSV Distinguished Lecture - A 312GHz Injection-Locked Radiator in 65nm CMOS” will take place as follows:

Date: 22 Sept 2017 (Fri)

Time: 11:00 - 12:00

Venue: Lecture Hall, G013, N21, University of Macau

 

The speaker is:

Dr. Liang Wu
Senior Research Fellow, State Key Laboratory of Millimeter Waves (Hong Kong) at eht City University, Hong Kong

 

Abstract:

As one of the least tapped regions in electromagnetic spectrum, the terahertz (THz) band from 0.3 THz to 3 THz is gaining increasing research interest due to the numerous potential applications uniquely enabled by such short wavelengths including imaging, spectroscopy and high-speed wireless communications. In reality, a technology vacuum known as “terahertz gap” exists, inducing major challenges in implementing radiation sources with sufficient output power to overcome the severe path loss at such high frequencies.

This talk will present an injected-locked THz radiator integrating a half-quadrature VCO, four injection-locked frequency quadruplers, and a chip-and-package distributed antenna. At the system level, an architecture based on injection-locking is employed to allow individual optimization of the output power and the phase noise. At the circuit level, intrinsic-delay compensation and harmonic boosting techniques are proposed to optimize the phase noise of the HQVCO and the output power of the ILFQs, respectively. The proposed distributed antenna composed of four exciting elements on silicon chip and a primary radiator in LTCC package features a wide bandwidth of 13% and a gain of 3.8 dBi without using lens at 312 GHz. Implemented in a 65-nm CMOS process, the radiator achieves output frequency around 312GHz and maximum EIRP of 10.5 dBm while consuming 300 mW. The output phase noise measures –109.3 dBc/Hz at 10-MHz offset and the DC-to-THz efficiency is 0.42%.

 

Biography:

Dr. Liang Wu received the B.S. and M.S. degrees in materials science from Fudan University, China, in 2004 and 2007 respectively, and the Ph.D. degree in electronic and computer engineering from the Hong Kong University of Science and Technology in 2012.

From March 2013, he was with the Department of Electronic and Computer Engineering at the Hong Kong University of Science and Technology as a visiting assistant professor and later became a research assistant professor and served as the deputy director of HKUST-Qualcomm Joint Innovation and Research Laboratory. Since December 2015, he has joined the State Key Laboratory of Millimeter Waves (Hong Kong) at the City University of Hong Kong as a senior research fellow. His research interests include RF and millimeter-wave integrated circuits and systems for wireless applications, CMOS integrated terahertz systems, and mixed-signal system-on-chip for visible light communications.

 

For more details, kindly find the event poster, bio and abstract.


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